Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors

Terahetz detection by heterostructed InAs/InSb nanowire based field effect transistors

Modeling of Manufacturing of Field-Effect Heterotransistors without P-n-junctions to Optimize Decreasing their Dimensions

It has been recently shown that manufacturing p-n-junctions, field-effect and bipolar transistors, thyristors in a multilayer structure by diffusion or ion implantation with the optimization of dopant and/or radiation defects leads to increase the sharpness of p-n-junctions (both single p-n-junctions and p-n-junctions framework their system). Due to the optimization, one can also obtain increas...

Carbon doping of InSb nanowires for high-performance p-channel field-effect-transistors.

Due to the unique physical properties, small bandgap III-V semiconductor nanowires such as InAs and InSb have been extensively studied for the next-generation high-speed and high-frequency electronics. However, further CMOS applications are still limited by the lack of efficient p-doping in these nanowire materials for high-performance p-channel devices. Here, we demonstrate a simple and effect...

Electrochemical Growth of InSb Nanowires and Report of a Single Nanowire Field Effect Transistor

InSb nanowires with high crystalline properties are synthesized with a diameter of 200 nm via direct current electrodeposition method inside the nanochannels of anodic alumina membranes. For the first time, the characteristics of field effect transistors based on InSb nanowires synthesized via electrochemistry is presented. A single InSb nanowire is used as a channel with gold source and drain ...

Ballistic to Diffusive Crossover in III–V Nanowire Transistors

In this paper, we examine the crossover between 4 ballistic and diffusive transport in III–V nanowire transistors. 5 We find that at lower drain voltages the ballistic-to-diffusive 6 crossover occurs at channel lengths of approximately 2.3 nm at 7 room temperature. However, when we increase the drain voltage, 8 we find that the ballistic-to-diffusive crossover can be more than 9 nine times as l...